symbol max p-channel units v ds v v gs v i dm i ar a e ar mj t j ,t stg c symbol device typ max units nch 48 62.5 c/w nch 74 110 c/w r q jl nch 35 40 c/w pch 48 62.5 c/w pch 74 110 c/w r q jl pch 35 40 c/w maximumjunctiontolead c steadystate maximumjunctiontoambient a t10s r q ja maximumjunctiontoambient a steadystate 30 t a =70c powerdissipation t a =25c p d steadystate junctionandstoragetemperaturerange a continuousdraincurrent a t a =25c i d t a =70c pulseddraincurrent b w 6.95.8 30 2 1.44 5 6 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 30 20 drainsourcevoltage 20 gatesourcevoltagethermal characteristics: n-channel and p-channel 55to150 55to150 maximumjunctiontolead c steadystate parametermaximumjunctiontoambient a t10s r q ja maximumjunctiontoambient a 2020 avalanchecurrent b repetitiveavalancheenergy0.1mh b 1511 ao4624complementary enhancement mode field effect transistor features nchannelpchannel v ds (v)=30v30v i d =6.9a(v gs =10v)6a(v gs =10v) r ds(on) r ds(on) <28m w (v gs =10v)<35m w (v gs =10v) <42m w (v gs =4.5v)<58m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theao4624/lusesadvancedtrenchtechnologymosfetstoprovideexcellent r ds(on) andlowgatecharge.the complementarymosfetsmaybeusedtoformalevelshiftedhighsideswitch,andfora hostofotherapplications.ao4624and ao4624lareelectricallyidentical. rohscompliant ao4624lishalogenfree g1 s1 g2 s2 d1 d1 d2 d2 12 3 4 87 6 5 soic-8 g2 d2s2 g1 d1 s1 n-channel p-channel soic-8 top view bottom view alpha & omega semiconductor, ltd.
ao4624 symbol min typ max units bv dss 30 v 0.002 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 23 28 t j =125c 31 38 34 42 m w g fs 10 15.4 s v sd 0.76 1 v i s 3 a c iss 737 885 pf c oss 115 pf c rss 73 pf r g 1.2 2 w q g (10v) 13.84 17 nc q g (4.5v) 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 7 ns t r 4.1 6 ns t d(off) 20.6 30 ns t f 5.2 8 ns t rr 17.9 21.5 ns q rr 9.8 11.8 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. n-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drainsourcebreakdownvoltage i d =250 m a,v gs =0v i dss zerogatevoltagedraincurrent v ds =24v,v gs =0v m a gatebodyleakagecurrent v ds =0v,v gs =20v gatethresholdvoltage v ds =v gs i d =250 m a onstatedraincurrent v gs =4.5v,v ds =5v r ds(on) staticdrainsourceonresistance v gs =10v,i d =6.9a m w v gs =4.5v,i d =5.0a forwardtransconductance v ds =5v,i d =6.9a diodeforwardvoltage i s =1a maximumbodydiodecontinuouscurrent dynamic parameters inputcapacitance v gs =0v,v ds =15v,f=1mhz outputcapacitancereversetransfercapacitance gateresistance v gs =0v,v ds =0v,f=1mhz switching parameters totalgatecharge v gs =10v,v ds =15v,i d =6.9a totalgatechargegatesourcecharge gatedraincharge turnondelaytime v gs =10v,v ds =15v,r l =2.2 w , r gen =3 w turnonrisetimeturnoffdelaytime turnofffalltime bodydiodereverserecoverytime i f =6.9a,di/dt=100a/ m s bodydiodereverserecoverycharge i f =6.9a,di/dt=100a/ m s a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the valueinanygivenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistance rating.b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther q ja isthesumofthethermalimpedencefromjunctiontoleadr q jl andleadtoambient.r q jl and r q jc areequivalenttermsreferringto thermalresistancefromjunctiontodrainlead.d.thestaticcharacteristicsinfigures1to6areobtainedusing80 m spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating.rev1:jan.2009 alpha & omega semiconductor, ltd.
ao4624 typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6.9a 125c 25c 25c i d =6.9a 5v 6v i d =5a alpha & omega semiconductor, ltd.
ao4624 typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
ao4624 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform ig vgs + vdc dut l vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f di/dt i rm rr vdd vdd q=idt t rr + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar alpha & omega semiconductor, ltd.
ao4624 symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1.2 2 2.4 v i d(on) 30 a 27 35 t j =125c 37 45 45 58 m w g fs 13 s v sd 0.76 1 v i s 4.2 a c iss 920 1100 pf c oss 190 pf c rss 122 pf r g 3.6 5.4 w q g (10v) 18.5 22.2 nc q g (4.5v) 9.6 11.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 11.5 ns t r 5.7 8.5 ns t d(off) 20.2 30 ns t f 9.5 14 ns t rr 20 24 ns q rr 12.3 15 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drainsourcebreakdownvoltage i d =250 m a,v gs =0v i dss zerogatevoltagedraincurrent v ds =24v,v gs =0v m a gatebodyleakagecurrent v ds =0v,v gs =20v gatethresholdvoltage v ds =v gs i d =250 m a onstatedraincurrent v gs =10v,v ds =5v r ds(on) staticdrainsourceonresistance v gs =10v,i d =6a m w v gs =4.5v,i d =5a forwardtransconductance v ds =5v,i d =6a diodeforwardvoltage i s =1a,v gs =0v maximumbodydiodecontinuouscurrent dynamic parameters inputcapacitance v gs =0v,v ds =15v,f=1mhz outputcapacitancereversetransfercapacitance gateresistance v gs =0v,v ds =0v,f=1mhz switching parameters totalgatecharge(10v) v gs =10v,v ds =15v,i d =6a totalgatecharge(4.5v)gatesourcecharge gatedraincharge turnondelaytime v gs =10v,v ds =15v,r l =2.7 w , r gen =3 w turnonrisetimeturnoffdelaytime turnofffalltime bodydiodereverserecoverytime i f =6a,di/dt=100a/ m s bodydiodereverserecoverycharge i f =6a,di/dt=100a/ m s a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c. thevalueinanyagivenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermal resistancerating. b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther q ja isthesumofthethermalimpedencefromjunctiontoleadr q jl andleadtoambient. d.thestaticcharacteristicsinfigures1to6,12,14areobtainedusing80 m spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the soacurveprovidesasinglepulserating. a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the valueinanygivenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistance rating.b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther q ja isthesumofthethermalimpedencefromjunctiontoleadr q jl andleadtoambient.r q jl andr q jc areequivalenttermsreferringto thermalresistancefromjunctiontodrainlead.d.thestaticcharacteristicsinfigures1to6,12,14areobtainedusing80 m spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating.rev1:jan.2009 alpha & omega semiconductor, ltd.
ao4624 typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =3v 6v 3.5v 4v 10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 20 30 40 50 60 70 80 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e06 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 20 30 40 50 60 70 80 90 100 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6a 25c 125c i d =6a 4.5v 5v i d =5a alpha & omega semiconductor, ltd.
ao4624 typical electrical and thermal characteristics: p-channel 0 2 4 6 8 10 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c,t a =25c v ds =15v i d =6a singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
ao4624 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gatechargetestcircuit&waveform + + 10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclampedinductiveswitching(uis)testcircuit& waveforms vds l + 2 e=1/2li ar ar bv dss i ar ig vgs + vdc dut l vgs isd dioderecoverytestcircuit&waveforms vds vds+ di/dt rm rr vdd vdd q=idt t rr isd vds f i i vdc dut vdd vgs vds vgs rl rg resistiveswitchingtestcircuit&waveforms + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) alpha & omega semiconductor, ltd.
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